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1

Growth and high temperature performance of semi-insulating silicon carbide

Reshanov, Sergey A

Journal:

Diamond and Related Materials

Année:

2000

Langue:

english

Fichier:

PDF, 119 KB

english, 2000

2

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Emtsev, Konstantin V., Bostwick, Aaron, Horn, Karsten, Jobst, Johannes, Kellogg, Gary L., Ley, Lothar, McChesney, Jessica L., Ohta, Taisuke, Reshanov, Sergey A., Röhrl, Jonas

Journal:

Nature Materials

Année:

2009

Langue:

english

Fichier:

PDF, 3.41 MB

english, 2009

3

Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts

Sergey A. Reshanov, Konstantin V. Emtsev, Florian Speck, Kun-Yuan Gao, Thomas K. Seyller, Gerhard Pensl, Lothar Ley

Journal:

physica status solidi (b)

Année:

2008

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2008

4

(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory

Pensl, Gerhard, Schmid, Frank, Reshanov, Sergey A., Weber, Heiko B., Bockstedte, M., Mattausch, Alexander, Pankratov, Oleg, Ohshima, Takeshi, Itoh, Hisayoshi

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 252 KB

english, 2007

5

SiC MATERIAL PROPERTIES

PENSL, GERHARD, CIOBANU, FLORIN, FRANK, THOMAS, KRIEGER, MICHAEL, RESHANOV, SERGEY, SCHMID, FRANK, WEIDNER, MICHAEL

Journal:

International Journal of High Speed Electronics and Systems

Année:

2005

Langue:

english

Fichier:

PDF, 2.01 MB

english, 2005

6

Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport

Reshanov, Sergey A., Rastegaev, V.P., Tairov, Yuri M.

Journal:

Materials Science Forum

Année:

2001

Fichier:

PDF, 364 KB

2001

7

Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-doped SiC

Pensl, Gerhard, Ciobanu, Florin, Krieger, Michael, Laube, Michael, Reshanov, Sergey, Schmid, Frank, Wagner, Günter, Nagasawa, Hiroyuki, Schöner, Adolf

Journal:

MRS Proceedings

Année:

2002

Langue:

english

Fichier:

PDF, 296 KB

english, 2002

8

Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

Elahipanah, Hossein, Thierry-Jebali, Nicolas, Reshanov, Sergey A., Kaplan, Wlodek, Zhang, A., Lim, Jang Kwon, Bakowski, Mietek, Östling, Mikael, Schöner, Adolf

Journal:

Materials Science Forum

Année:

2017

Langue:

english

Fichier:

PDF, 661 KB

english, 2017

9

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza, Vito Raineri

Journal:

Nanoscale Research Letters

Année:

2011

Langue:

english

Fichier:

PDF, 692 KB

english, 2011

10

4H- and 6H-SiC UV photodetectors

Ludwig Östlund, Qin Wang, Romain Esteve, Susanne Almqvist, David Rihtnesberg, Sergey Reshanov, Andy Z. Z. Zhang, Jang-Kwon Lim, Mietek Bakowski, Adolf Schöner, Wlodek Kaplan

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 301 KB

english, 2012

11

Electrical and Optical Characterization of SiC

Pensl, Gerhard, Schmid, Frank, Ciobanu, Florin, Laube, Michael, Reshanov, Sergey A., Schulze, Norbert, Semmelroth, Kurt, Schöner, Adolf, Wagner, Günter, Nagasawa, Hiroyuki

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 289 KB

english, 2003

12

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Roensch, Sebastian, Hertel, Stefan, Reshanov, Sergey, Schöner, Adolf, Krieger, Michael, Weber, Heiko B.

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2014

13

Comparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal

Yen, Cheng Tyng, Hung, Chien Chung, Mikhaylov, Aleksey, Lee, Chwan Ying, Lee, Lurng Shehng, Wei, Jeng Hua, Chiu, Ting Yu, Huang, Chih Fang, Reshanov, Sergey, Schöner, Adolf

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2014

14

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Kalinina, Evgenia V., Kholuyanov, G., Sitnikova, A.A., Kossov, V., Yafaev, R., Pensl, Gerhard, Reshanov, Sergey A., Konstantinov, Andrey O., Hallén, Anders

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 1.61 MB

english, 2003

15

Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique

Løvlie, L.S., Pintilie, Ioana, Kumar C.P., S., Grossner, Ulrike, Svensson, Bengt G., Beljakowa, Svetlana, Reshanov, Sergey A., Krieger, Michael, Pensl, Gerhard

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 358 KB

english, 2009

16

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

Ghandi, Reza, Domeij, Martin, Esteve, Romain, Buono, Benedetto, Schöner, Adolf, Han, Ji Sheng, Dimitrijev, Sima, Reshanov, Sergey A., Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Année:

2010

Langue:

english

Fichier:

PDF, 320 KB

english, 2010

17

Theoretical Studies of Vanadium Impurity in β-SiC

Tairov, Yuri M., Reshanov, Sergey A., Parfenova, I.I., Yuryeva, E.I., Ivanovskii, A.L.

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 323 KB

2002

18

Lifetime Investigations of 4H-SiC PiN Power Diodes

Reshanov, Sergey A., Bartsch, Wolfgang, Zippelius, Bernd, Pensl, Gerhard

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 224 KB

english, 2009

19

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Yan, Fei, Devaty, Robert P., Choyke, Wolfgang J., Danno, Katsunori, Alfieri, Giovanni, Kimoto, Tsunenobu, Onoda, Shinobu, Ohshima, Takeshi, Reshanov, Sergey A., Beljakowa, Svetlana, Zippelius, Bernd,

Journal:

Materials Science Forum

Année:

2010

Langue:

english

Fichier:

PDF, 774 KB

english, 2010

20

MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001)

Lorenzzi, Jean, Esteve, Romain, Jegenyes, Nikoletta, Reshanov, Sergey A., Schöner, Adolf, Ferro, Gabriel

Journal:

Journal of The Electrochemical Society

Année:

2011

Langue:

english

Fichier:

PDF, 947 KB

english, 2011

21

Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

Bakowski, Mietek, Ranstad, Per, Lim, Jang-Kwon, Kaplan, Wlodek, Reshanov, Sergey A., Schoner, Adolf, Giezendanner, Florian, Ranstad, Anton

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 4.14 MB

english, 2015

22

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

Sledziewski, Tomasz, Mikhaylov, Aleksey, Reshanov, Sergey, Schöner, Adolf, Weber, Heiko B., Krieger, Michael

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 882 KB

english, 2014

23

SiC Epi-Channel Lateral MOSFETs

Yen, Cheng Tyng, Bakowski, Mietek, Hung, Chien Chung, Reshanov, Sergey, Schöner, Adolf, Lee, Chwan Ying, Lee, Lurng Shehng, Wei, Jeng Hua, Chiu, Ting Yu, Huang, Chih Fang

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2014

24

Selenium and Tellurium Double Donors in SiC

Reshanov, Sergey A., Weber, Heiko B., Pensl, Gerhard, Schöner, Adolf, Nagasawa, Hiroyuki

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 415 KB

english, 2007

25

Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface

Mikhaylov, Aleksey I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, Sergey A., Schöner, Adolf

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 1.73 MB

english, 2014

26

A Simple Model of 3d Impurities in Cubic Silicon Carbide

Parfenova, I.I., Yuryeva, E.I., Reshanov, Sergey A., Rastegaev, V.P., Ivanovskii, A.L.

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 161 KB

english, 2003

27

Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

Esteve, Romain, Schöner, Adolf, Reshanov, Sergey A., Zetterling, Carl Mikael

Journal:

Materials Science Forum

Année:

2010

Langue:

english

Fichier:

PDF, 367 KB

english, 2010

28

PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals

Rasp, Michael, Straubinger, Thomas L., Schmitt, Erwin, Bickermann, Matthias, Sadowski, Horst, Reshanov, Sergey A.

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 322 KB

english, 2003

29

Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC

Reshanov, Sergey A., Pensl, Gerhard

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 223 KB

english, 2005

30

Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers

Reshanov, Sergey A., Klettke, O., Pensl, Gerhard, Choyke, W.J.

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 445 KB

english, 2003

31

Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures

Mikhaylov, Aleksey, Sledziewski, Tomasz, Afanasyev, Alexey, Luchinin, Victor, Reshanov, Sergey, Schöner, Adolf, Krieger, Michael

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 369 KB

english, 2014

32

Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy

Reshanov, Sergey A., Klettke, O., Pensl, Gerhard

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 226 KB

english, 2003

33

Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

Esteve, Romain, Schoner, Adolf, Reshanov, Sergey A., Zetterling, Carl-Mikael

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 139 KB

english, 2010

34

3C-SiC MOS Based Devices: From Material Growth to Device Characterization

Lorenzzi, Jean, Esteve, Romain, Jegenyes, Nikoletta, Reshanov, Sergey A., Schöner, Adolf, Ferro, Gabriel

Journal:

Materials Science Forum

Année:

2011

Langue:

english

Fichier:

PDF, 539 KB

english, 2011

35

Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

Beljakowa, Svetlana, Reshanov, Sergey A., Zippelius, Bernd, Krieger, Michael, Pensl, Gerhard, Danno, Katsunori, Kimoto, Tsunenobu, Onoda, Shinobu, Ohshima, Takeshi, Yan, Fei, Devaty, Robert P., Choyke

Journal:

Materials Science Forum

Année:

2010

Langue:

english

Fichier:

PDF, 310 KB

english, 2010

36

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy

Reshanov, Sergey A., Schneider, Konrad, Helbig, Reinhard, Pensl, Gerhard, Nagasawa, Hiroyuki, Schöner, Adolf

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 212 KB

english, 2004

37

EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V

von Bardeleben, Hans Jürgen, Cantin, J.L., Reshanov, Sergey A., Rastegaev, V.P.

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 195 KB

english, 2003

38

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

Hishiki, Shigeomi, Reshanov, Sergey A., Ohshima, Takeshi, Itoh, Hisayoshi, Pensl, Gerhard

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 2.37 MB

english, 2009

39

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

Reshanov, Sergey A., Pensl, Gerhard, Danno, Katsunori, Kimoto, Tsunenobu, Hishiki, Shigeomi, Ohshima, Takeshi, Yan, Fei, Devaty, Robert P., Choyke, W.J.

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 324 KB

english, 2009

40

Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons

Weidner, Michael, Trapaidze, Lia, Pensl, Gerhard, Reshanov, Sergey A., Schöner, Adolf, Itoh, Hisayoshi, Ohshima, Takeshi, Kimoto, Tsunenobu

Journal:

Materials Science Forum

Année:

2010

Langue:

english

Fichier:

PDF, 450 KB

english, 2010

41

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Reshanov, Sergey A., Beljakowa, Svetlana, Zippelius, Bernd, Pensl, Gerhard, Danno, Katsunori, Alfieri, Giovanni, Kimoto, Tsunenobu, Onoda, Shinobu, Ohshima, Takeshi, Yan, Fei, Devaty, Robert P., Choyk

Journal:

Materials Science Forum

Année:

2010

Langue:

english

Fichier:

PDF, 373 KB

english, 2010

42

Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)

Hatta, Naoki, Kawahara, Takamitsu, Yagi, Kuniaki, Nagasawa, Hiroyuki, Reshanov, Sergey A., Schöner, Adolf

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 484 KB

english, 2012

43

High Quality 3C-SiC Substrate for MOSFET Fabrication

Nagasawa, Hiroyuki, Kawahara, Takamitsu, Yagi, Kuniaki, Hatta, Naoki, Uchida, Hidetsugu, Kobayashi, Motoki, Reshanov, Sergey A., Esteve, Romain, Schöner, Adolf

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 977 KB

english, 2012

44

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer

Reshanov, Sergey A., Beljakowa, Svetlana, Frank, Thomas, Zippelius, Bernd, Krieger, Michael, Pensl, Gerhard, Noborio, Masato, Kimoto, Tsunenobu

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 324 KB

english, 2009

45

A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors

Lim, Jang Kwon, Östlund, Ludwig, Wang, Qin, Kaplan, Wlodek, Reshanov, Sergey A., Schöner, Adolf, Bakowski, Mietek, Nee, Hans Peter

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 450 KB

english, 2012

46

AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Evolution of the electrical characteristics of Pt∕3C-SiC Schottky contacts upon thermal annealing

Eriksson, Jens, Roccaforte, Fabrizio, Reshanov, Sergey, Giannazzo, Filippo, Lo Nigro, Raffaella, Raineri, Vito, Ferro, Gabriel, Siffert, Paul

Année:

2010

Langue:

english

Fichier:

PDF, 522 KB

english, 2010

47

Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers

Rossmann, H.R., Gysin, Urs, Bubendorf, Alexander, Glatzel, Thilo, Reshanov, Sergey, Schöner, Adolf, Jung, T.A., Meyer, Ernst, Bartolf, Holger

Journal:

Materials Science Forum

Année:

2015

Langue:

english

Fichier:

PDF, 1.24 MB

english, 2015

48

Tailoring the 4H-SiC/SiO 2 MOS-interface for SiC-based power switches

Mikhaylov, Aleksey I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, Sergey A., Schöner, Adolf, Knoll, Lars, Minamisawa, Renato A., Alfieri, Giovanni, Bartolf, Holger

Journal:

Japanese Journal of Applied Physics

Année:

2016

Langue:

english

Fichier:

PDF, 1.91 MB

english, 2016

49

Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes

Afanasyev, Alexey V., Ilyin, Vladimir A., Luchinin, Victor V., Reshanov, Sergey A., Schöner, Adolf, Sergushichev, K.A., Smirnov, A.A.

Journal:

Materials Science Forum

Année:

2017

Langue:

english

Fichier:

PDF, 2.73 MB

english, 2017

50

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

Gysin, Urs, Glatzel, Thilo, Schmölzer, Thomas, Schöner, Adolf, Reshanov, Sergey, Bartolf, Holger, Meyer, Ernst

Journal:

Beilstein Journal of Nanotechnology

Année:

2015

Langue:

english

Fichier:

PDF, 5.46 MB

english, 2015